Predrag Habaš: search on Z-Library

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1

Modeling study of the experimental techniques for the characterization of MOSFET hot-carrier aging

Journal:

Microelectronics Reliability

Year:

1995

Language:

english

File:

PDF, 1.43 MB

english, 1995

2

Modeling study of the experimental techniques for the characterization of mosfet hot-carrier aging

Journal:

Microelectronics Reliability

Year:

1995

Language:

english

File:

PDF, 1.54 MB

english, 1995

3

Charge-Based Compact Model for Bias-Dependent Variability of 1/f Noise in MOSFETs

Mavredakis, Nikolaos, Makris, Nikolaos, Habas, Predrag, Bucher, Matthias

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.73 MB

english, 2016

4

On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling

Predrag Habaš, Siegfried Selberherr

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 638 KB

english, 1990

5

[IEEE 2017 International Conference on Noise and Fluctuations (ICNF) - Vilnius, Lithuania (2017.6.20-2017.6.23)] 2017 International Conference on Noise and Fluctuations (ICNF) - Statistical compact modeling of Low Frequency Noise in Buried-Channel, Native, and standard MOSFETs

Mavredakis, Nikolaos, Bucher, Matthias, Habas, Predrag, Acovic, Alexandre, Meyer, Rene

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

6

Physical mechanism of interpoly capacitance reduction in high-voltage stress

Predrag Habaš, Alexandre Acovic, Biljana Marjanović, Maurice Lobet, Mohammed Benkais

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.12 MB

english, 2012

7

A physics based analytical MOSFET model with accurate field dependent mobility

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.04 MB

english, 1990

8

A study of backside laser-probe signals in MOSFETs

Norbert Seliger, Predrag Habaš, Erich Gornik

Journal:

Microelectronic Engineering

Year:

1996

Language:

english

File:

PDF, 426 KB

english, 1996

9

[IEEE 2017 International Conference on Noise and Fluctuations (ICNF) - Vilnius, Lithuania (2017.6.20-2017.6.23)] 2017 International Conference on Noise and Fluctuations (ICNF) - Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology

Coustans, Mathieu, Jazaeri, Farzan, Enz, Christian, Krummenacher, Francois, Kayal, Maher, Meyer, Rene, Acovic, Alexandre, Habas, Predrag, Lolivier, Jerome, Bucher, Matthias

Year:

2017

Language:

english

File:

PDF, 1.56 MB

english, 2017

10

[IEEE 2015 International Conference on Noise and Fluctuations (ICNF) - Xian, China (2015.6.2-2015.6.6)] 2015 International Conference on Noise and Fluctuations (ICNF) - Variability of low frequency noise in moderately-sized MOSFETs — A model for the area- and gate voltage-dependence

Mavredakis, Nikolaos, Habas, Predrag, Acovic, Alexandre, Meyer, Rene, Bucher, Matthias

Year:

2015

Language:

english

File:

PDF, 803 KB

english, 2015

11

Hot-carrier aging of NMOST in analog circuits with large periodic drain signal

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 173 KB

english, 2006

12

[IEEE 2017 International Conference on Noise and Fluctuations (ICNF) - Vilnius, Lithuania (2017.6.20-2017.6.23)] 2017 International Conference on Noise and Fluctuations (ICNF) - Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors

Nikolaou, Aristeidis, Mavredakis, Nikolaos, Bucher, Matthias, Habas, Predrag, Acovic, Alexandre, Meyer, Rene

Year:

2017

Language:

english

File:

PDF, 1.40 MB

english, 2017

13

Charge-pumping characteristics of virgin and stressed lightly-doped drain MOSFETs

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 1.54 MB

english, 1995

14

Transient two-dimensional numerical analysis of the charge-pumping experiment

Predrag Habaš, Otto Heinreichsberger, Siegfried Selberherr

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 312 KB

english, 1992

15

[IEEE 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Burlingame, CA, USA (2017.10.16-2017.10.19)] 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Hump-effect impact on subthreshold VLSI circuit

Coustans, Mathieu, Gauthey, Darryl, Rota, Sergio, Acovic, Alexandre, Habas, Predrag, Meyer, Rene

Year:

2017

Language:

english

File:

PDF, 1.39 MB

english, 2017

16

Evaluation of techniques for characterizing virgin and γ-irradiated power VDMOSFETs

Saša Mileusnić, Miloš Živanov, Predrag Habaš

Journal:

Microelectronics Journal

Year:

2002

Language:

english

File:

PDF, 299 KB

english, 2002

17

Analysis of geometric charge-pumping components in a thin-film SOI device

Otto Heinreichsberger, Predrag Habaš, Siegfried Selberherr

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 279 KB

english, 1992

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